HY3215B encapsulation TO-263 150V 120A 15m Ω 300W MOS tube Hua Yi Micro electricity

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  • brand: Huayi Microelectronics
    model: HY3215B
    encapsulation: TO-263
    Batch number: 23+
    FET type: N channel
    Drain source voltage (VDSS): 150
    Drain current (ID): 120
    Drain source on resistance (RDS on): 15
    Gate source voltage (VGS): 25
    Gate charge (QG): 137
    Reverse recovery time: /
    Maximum dissipation power: 300
    Configuration type: /
    Operating temperature range: /
    Installation type: /
    application area : New energy, household appliances, 3C digital, automotive electronics, measuring instruments, smart homes, network communication, security equipment, radio and television education, medical electronics, lighting electronics, wearable devices, military/aerospace
    Channel type: N channel
    Conductive mode: Enhanced
    type: Insulated gate (MOSFET)
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    HY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricity
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Price: 3.90 0.58
Domestic Shipping: 0.00 0.00
HY3215B encapsulation TO-263 150V 120A 15m Ω 300W MOS tube Hua Yi Micro electricity

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brand:Huayi Microelectronics
model:HY3215B
encapsulation:TO-263
Batch number:23+
FET type:N channel
Drain source voltage (VDSS):150
Drain current (ID):120
Drain source on resistance (RDS on):15
Gate source voltage (VGS):25
Gate charge (QG):137
Reverse recovery time:/
Maximum dissipation power:300
Configuration type:/
Operating temperature range:/
Installation type:/
application area :New energy, household appliances, 3C digital, automotive electronics, measuring instruments, smart homes, network communication, security equipment, radio and television education, medical electronics, lighting electronics, wearable devices, military/aerospace
Channel type:N channel
Conductive mode:Enhanced
type:Insulated gate (MOSFET)
HY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricityHY3215B   encapsulation TO-263   150V 120A   15m Ω   300W     MOS tube   Hua Yi Micro electricity
  • Items that cannot be shipped through mail

  • 1. Items forbidden to be circulated or shipped according to the national law.

  • 2. Explosive, flammable, erosive, radioactive or toxic hazardous items.

  • 3. Publications, books, sources or items containing reactionary content or obscenity.

  • 4. Currencies of all kinds.

  • 5. Items that violate public health.

  • 6. Items that rot easily.

  • 7. Live animals (not counting bees, silkworms and leeches, as long as the packaging ensures the safety of the workers).

  • 8. Items that are not adequately packaged and may cause hazards to the workers, or contaminate or damage other packages.

  • 9. Other items unsuitable for shipment though mail.

  • Shipping Method
  • Delivery Time
  • Shipment Feature

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